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DMN62D0SFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low On-Resistance
V (BR)DSS
60V
R DS(ON)
2 ? @ V GS = 10V
3 ? @ V GS = 5V
I D
T A = 25°C
540mA
430mA
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Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV
Lead Free/RoHS Compliant (Note 1)
Green Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
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DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
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Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Drain
Gate
Body
Diode
D
S
Gate
Protection
Diode
Source
G
ESD PROTECTED TO 2kV
Top View
Bottom View
Equivalent Circuit
Top view
Pin-out
Ordering Information (Note 3)
Notes:
Part Number
DMN62D0SFD -7
1. No purposefully added lead.
Case
X1-DFN1212-3
Packaging
3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
K62
YM
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
? Diodes Incorporated
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